Comprehensive Study of Cross-Section Dependent Effective Masses for Silicon Based Gate-All-Around Transistors
The use of bulk effective masses in simulations of the modern-day ultra-scaled transistor is erroneous due to the strong dependence of the band structure Shocks on the cross-section dimensions and shape.This has to be accounted for in transport simulations due to the significant impact of the effective masses on quantum confinement effects and mobi